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1

Accuracy of conventional inversion charge modeling in scaled down MOS devices

S.C. Bose, S. Srivastava, Chandra Shekhar, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1988

Language:

english

File:

PDF, 168 KB

english, 1988

2

Staged Development of Dynamic Capabilities: A Study of International Joint Ventures in India

Roy, Kaushik, Khokle, Pradyumana

Journal:

Thunderbird International Business Review

Year:

2016

Language:

english

File:

PDF, 194 KB

english, 2016

3

Characterisation of Se implanted layers for GaAs FETs

B.R. Singh, Madhu Kochhar, O.P. Daga, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1983

Language:

english

File:

PDF, 342 KB

english, 1983

4

The role of surface treatment on the anodic oxidation of n-GaAs

Madhu Kochhar, O.P. Daga, B.R. Singh, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1984

Language:

english

File:

PDF, 206 KB

english, 1984

5

Ashing process for dry photolithography

Awatar Singh, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1984

Language:

english

File:

PDF, 57 KB

english, 1984

6

On the development of poly gate n-MOS technology

O.P. Wadhawan, A. Srivastava, D.P. Runthala, S.S. Shakhawat, P.N. Andhare, V.K. Dwivedi, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1985

Language:

english

File:

PDF, 713 KB

english, 1985

7

A Cu-Al2O3-Al moisture sensor for high humidities

R.K. Nahar, V.K. Khanna, W.S. Khokle, P.J. George

Journal:

Microelectronics Reliability

Year:

1987

Language:

english

File:

PDF, 409 KB

english, 1987

8

On simulation of resist profiles in electron beam lithography

P.R. Deshmukh, N.K.L. Raja, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1988

Language:

english

File:

PDF, 354 KB

english, 1988

9

Development and performance characterization of the lightly doped drain MOS transistor

P.N. Andhare, R.K. Nahar, N.M. Devashrayee, S. Chandra, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1990

Language:

english

File:

PDF, 709 KB

english, 1990

10

On the electrical resistivity and chemical etching of TiSi2 thin films sputtered from a composite target

R.K. Nahar, N.M. Devashrayee, W.S. Khokle, P.J. George

Journal:

Microelectronics Reliability

Year:

1990

Language:

english

File:

PDF, 460 KB

english, 1990

11

Effect of time-dependent development process on the limit of proximity exposure compensation in electron beam lithography

P.R. Deshmukh, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1991

Language:

english

File:

PDF, 496 KB

english, 1991

12

Reliability of high temperature superconductor metal contacts

Ajay Agarwal, Ram P. Gupta, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1994

Language:

english

File:

PDF, 295 KB

english, 1994

13

Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAs

R.P. Gupta, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 698 KB

english, 1985

14

Evidence for formation of low resistance TiSi2 layer with Ti/NSi/Ti/native oxide/PSi (100) stack

Awatar Singh, W.S. Khokle, R.K. Jaiswal, S.A.A. Shah

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 117 KB

english, 1989

15

Diffusion of gallium in thin gold films on GaAs

Ram P. Gupta, W.S. Khokle, J. Wuerfl, H.L. Hartnagel

Journal:

Thin Solid Films

Year:

1987

Language:

english

File:

PDF, 210 KB

english, 1987

16

The effect of substrate orientation on WSi2 formation

Awatar Singh, W.S. Khokle, K. Lal

Journal:

Thin Solid Films

Year:

1994

Language:

english

File:

PDF, 260 KB

english, 1994

17

Structural and material properties of tungsten silicide formed at low temperature

Awatar Singh, WS Khokle, K Lal

Journal:

Year:

1994

Language:

english

File:

PDF, 395 KB

english, 1994

18

Air bridge and via hole technology for GaAs based microwave devices

J.K. Singh, O.P. Daga, H.S. Kothari, B.R. Singh, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1988

Language:

english

File:

PDF, 1.50 MB

english, 1988

19

Adjustment of threshold voltage of MOS devices by ion implantation

G.S. Virdi, S. Singh, B.C. Pathak, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1988

Language:

english

File:

PDF, 486 KB

english, 1988

20

Specific resistivity of a metal-n GaAs OHMIC contact with an intermediate N+ layer

R.P. Gupta, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1985

Language:

english

File:

PDF, 300 KB

english, 1985

21

A simple method of photomask yield optimization by defect inspection

S.N. Gupta, A.K. Bagchi, N.N. Kundu, W.S. Khokle

Journal:

Microelectronics Reliability

Year:

1984

Language:

english

File:

PDF, 193 KB

english, 1984

22

Fabrication of damage free micropatterns in silicon

R.P. Gupta, P.R. Deshmukh, W.S. Khokle, Amarjit Singh

Journal:

Microelectronics Reliability

Year:

1984

Language:

english

File:

PDF, 465 KB

english, 1984

23

Capacitance uniformity of silicon hyperabrupt varactors

Gupta, R.P., Sharma, M.K., Khokle, W.S.

Journal:

Proceedings of the IEEE

Year:

1984

Language:

english

File:

PDF, 225 KB

english, 1984

24

A Horizontally Polarized Rectangular Stepped Slot Antenna for Ultra Wide Bandwidth With Boresight Radiation Patterns

Kumar, Raj, Khokle, Rajas, Ram Krishna, R. V. S.

Journal:

IEEE Transactions on Antennas and Propagation

Year:

2014

Language:

english

File:

PDF, 2.86 MB

english, 2014

25

Study of reaction kinetics for titanium disilicide formation by evaporated titanium on silicon

Awatar Singh, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1989

Language:

english

File:

PDF, 362 KB

english, 1989

26

Thermal effects on silicides of titanium, cobalt and nickel in device structures

Awatar Singh, Mulayam Singh, W.S. Khokle, K.C. Nagpal

Journal:

Microelectronics Journal

Year:

1991

Language:

english

File:

PDF, 3.51 MB

english, 1991

27

The effect of Al-GaAs interaction on the technology of self-aligned gallium arsenide MESFETs

B.R. Singh, O.P. Daga, Madhu Kochhar, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1982

Language:

english

File:

PDF, 480 KB

english, 1982

28

Visible light emission from silicon MOSFETS

N.C. Das, W.S. Khokle, S.D. Mohanty

Journal:

Solid-State Electronics

Year:

1985

Language:

english

File:

PDF, 1.52 MB

english, 1985

29

Drift velocity and ionization coefficient for holes in single-valley semiconductors

D.K. Gautam, W.S. Khokle, K.B. Garg

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 371 KB

english, 1987

30

Photon emission from reverse-biased silicon P-N junctions

D.K. Gautam, W.S. Khokle, K.B. Garg

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 345 KB

english, 1988

31

Effect of absorption on photon emission from reverse-biased silicon p-n junctions

D.K. Gautam, W.S. Khokle, K.B. Garg

Journal:

Solid-State Electronics

Year:

1988

Language:

english

File:

PDF, 224 KB

english, 1988

32

Effect of argon implantation on antimony implanted silicon

G.S. Virdi, S.K. Chattophadhyaya, N. Nath, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 392 KB

english, 1989

33

On the Monte Carlo simulation program “RESIS” for electron exposure of resists

P.R. Deshmukh, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 601 KB

english, 1989

34

Properties of the fluorine-implanted Si-SiO2 system

G.S. Virdi, C.M.S. Rauthan, B.C. Pathak, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1991

Language:

english

File:

PDF, 359 KB

english, 1991

35

On the role of fluorine in BF2+ implanted silicon

G.S. Virdi, C.M.S. Rauthan, B.C. Pathak, W.S. Khokle, S.K. Gupta, Krishan Lal

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 429 KB

english, 1992

36

Process and material properties of WSi2 formed by discharge treatment

Awatar Singh, P.D. Vyas, W.S. Khokle, C. Singh, K. Lal

Journal:

Solid-State Electronics

Year:

1993

Language:

english

File:

PDF, 211 KB

english, 1993

37

Contact resistance characteristics with AlSi alloy metallization

RK Nahar, NM Devashrayee, WS Khokle, PJ George

Journal:

Year:

1989

Language:

english

File:

PDF, 693 KB

english, 1989

38

EBIC probing — a possible tool for the verification of simulated electron beam exposure widths

M. Singh, N.R. Rajopadhye, N.K.L. Raja, W.S. Khokle

Journal:

Microelectronic Engineering

Year:

1989

Language:

english

File:

PDF, 289 KB

english, 1989

39

Relationship between mechanical, electronic and vibrational properties ofGexSi1−x strained layers

S.C. Jain, A. Atkinson, W.S. Khokle

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 236 KB

english, 1991

40

A data-base for IC mask making

N.N. Kundu, S.N. Gupta, A.K. Bagchi, D.R. Nagpal, A.V. Ramani, S. Khokle

Journal:

Microelectronics Journal

Year:

1983

Language:

english

File:

PDF, 456 KB

english, 1983

41

Simulation of resist profiles in single and triple layer electron beam lithography

P.R. Deshmukh, N.K.L. Raja, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1987

Language:

english

File:

PDF, 392 KB

english, 1987

42

The development of a fully implanted 3 micron poly-gate NMOS technology — (Part 1)

V.K. Dwivedi, G.S. Virdi, S. Gupta, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1987

Language:

english

File:

PDF, 224 KB

english, 1987

43

Fabrication of an n-MOS custom “subscriber chip” for a telephone exchange

V.K. Dwivedi, S. Gupta, S. Johri, G.S. Virdi, O.P. Wadhawan, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1988

Language:

english

File:

PDF, 1.10 MB

english, 1988

44

Sheet resistance and grain size study of nickel disilicide

A. Singh, W. S. Khokle

Journal:

physica status solidi (a)

Year:

1987

Language:

english

File:

PDF, 221 KB

english, 1987

45

X-ray diffraction and EDS analysis of Y1Ba2Cu3O9−y superconducting compound

B. R. Singh, H. S. Kothari, O. P. Daga, J. K. Singh, G. S. T. Rao, J. D. Jain, W. S. Khokle

Journal:

physica status solidi (a)

Year:

1988

Language:

english

File:

PDF, 177 KB

english, 1988

46

Energy and Momentum Loss Rates for Hot Electrons in Silicon

S. Ahmad, O. P. Daga, W. S. Khokle

Journal:

physica status solidi (b)

Year:

1970

Language:

english

File:

PDF, 371 KB

english, 1970

47

Impurity and Temperature Dependence of Saturated Drift Velocity in Silicon

O. P. Daga, W. S. Khokle, H. M. Ghule

Journal:

physica status solidi (b)

Year:

1974

Language:

english

File:

PDF, 134 KB

english, 1974

48

Transition Probability of Impact Ionization by Holes in Silicon

D. K. Gautam, W. S. Khokle, K. B. Garg

Journal:

physica status solidi (b)

Year:

1988

Language:

english

File:

PDF, 319 KB

english, 1988

49

An improved self aligned silicide process for VLSI

Awatar Singh, W.S. Khokle

Journal:

Microelectronics Journal

Year:

1989

Language:

english

File:

PDF, 372 KB

english, 1989

50

Comments on “an improved model to explain ohmic contact resistance of n-GaAs and other semiconductors”

Ram P. Gupta, W.S. Khokle

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 84 KB

english, 1987